Evgeny Chernyavskiy

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Evgeny Chernyavskiy

Design Technology Interface Expert

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Personal information

Professional experience (6 years, 1 month)

  • Mar 2011 - present

    (1 year, 3 months)

  • Aug 2010 - Feb 2011

    (7 months)

  • Nov 2009 - Jul 2010

    (9 months)

  • Dec 2005 - May 2009

    (3 years, 6 months)

  • Employment status
    Freelancer

Educational background

  • Jan 2000 - Jan 2004

About me

Understanding switching converter topologies and digital control systems.
High experience with layout design and optimization, process flow.
Simulation experience with HSPICE, TCAD tools and environments, Unix design systems experience.
Design and develop RFICs in BiCMOS or sub-micron IC CMOS technology, identifying and analyzing performance requirements and implementing robust, manufacturable designs with best-in-class performance.
Good working knowledge of advanced CMOS and RF wafer processing technologies and process interactions that affect device yields, including Systems on Chip (SoC) with Dual Gate Oxide (DGO).
Experience in ASIC design, clock/power distribution and analysis, RC extraction, timing analysis.
Experience with full-custom IC layout
Experience in IC layout verification (DRC)
Skilled in use of EDA tools for MEMS/NEMS design and analysis.
Skilled in Design and manufacturing MOS Gated Power Devices.
Skilled in Carrier Lifetime Measurements, CV Measurements, Chip reliability test.
Skilled in STI isolation, Trench refill, Chemical Mechanical Planarization processes.
 
Implemented Projects:
· Detectors Design and manufacturing: Humidity Sensor (Integrated Capacitor), Pressure Sensor (Bulk Silicon orientation (110)
· ChemFET and enzyme - protein sensitive FET
· Design and manufacturing BIB (Blocked Impurity Band) Photodetector for the 12-16 micron wavelength, 64x64 array, flip chip mounting with multiplexor, cooled T=10 K.
· Design and manufacturing 64 cells microbolometer linear array.
· Simulation, design, manufacturing and testing MOS controlled thyristor (2500V, 50 A)
· Simulation, design, manufacturing and testing Press Pack HV-IGBT (4500V, 40 –1000A)
· Simulation, design and manufacturing Solar Cells made with multisilicon wafers, 9,5% efficiency
· Avalanche Photodiode simulation (3D Single Event Upset) and optimization
· Semiconductor device models implemented with VHDL simulator
· Simulation and design submicron SOI MOSFET
· Design and manufacture SJ MOSFET Devices (CoolMOS)
· Design and manufacture Junction Termination Extension Variation Lateral Doping (JTE VLD), own theoretical results in design optimization.
 

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Contacts

Rolf Neitzer, Edmond Niculin, Klaus Turski, Ralf Hartmann

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