Dr. Gary Liang

- Built advanced fine circuit carriers for applying to integrated circuit (IC) chips. - Demonstrated the optimal lithography process for IC carriers with fine circuit. - Developed new materials used for IC carriers with fine circuit. - Evaluated advanced etching chemicals for fine line in IC carriers. - Evaluated advanced pretreatment chemicals for enhancing the resolution and adhesion capability of photoresist in IC carriers with fine line.

 Developed nanomaterials including metal oxide and metal.  Built the applications of nanomaterials for the market development.  Led and managed the R&D team (12 members) by following the concept of Peter Drucker.  Created the development strategy of products.  Managed and executed R&D products by cross-teamwork.  Established and designed the new research center.  Created the R&D certification process of ISO 9001.

- Established the hydride vapor phase epitaxy (HVPE) equipment and technology to fabricate III- nitride based films as a growth template in achieving the 27% increment of internal quantum efficiency for 370 nm-LEDs. - Developed the III-nitrides epitaxial films (AlN and AlGaN) by MOCVD for deep ultraviolet LEDs (emission length ≤ 280 nm). - Led two Ph.D. and two graduated students to execute the research programs. - Wrote and published journal and conference papers.