Dr. Gopalakrishnan T. Rengarajan
Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Gopalakrishnan T. Rengarajan
- Bis heute 3 Jahre und 4 Monate, seit Apr. 2023
Principal Engineer Research and Development - Innovatie Concepts
Infineon Technologies
• Spearheaded the development of advanced potting materials and concepts for next-generation power modules. •High-Temperature Encapsulation: Potting compounds for Si/SiC/GaN modules, ensuring long-term stability in the extreme environments of high-performance. • Innovated thermal management solutions to enhance efficiency in future power module designs. • Diffusion mechanisms of small molecules (moisture, corrosive gases) in power modules,
- 2 Jahre und 6 Monate, Okt. 2020 - März 2023
Senior Staff Engineer Research and Development - Innovative Concepts
Infineon Technologies
• Development and Optimized advanced assembly techniques, specifically stencil printing of silver paste and silver sintering for IGBT power modules. • Managed plasma cleaning protocols to ensure material compatibility and interface integrity. • Conducted systematic DOE (Design of Experiments) and FMEA (Failure Mode and Effects Analysis) to drive process stability. • Authored and filed patents based on technical innovations.
- 1 Jahr und 10 Monate, Jan. 2019 - Okt. 2020Infineon Technologies
Staff Engineer Research and Development - Innovative Concepts
• Development and Optimized advanced assembly techniques, specifically stencil printing of silver paste and silver sintering for IGBT power modules. • Managed plasma cleaning protocols to ensure material compatibility and interface integrity. • Conducted systematic DOE (Design of Experiments) and FMEA (Failure Mode and Effects Analysis) to drive process stability. • Authored and filed patents based on technical innovations.
- 2 Jahre und 4 Monate, Sep. 2016 - Dez. 2018
Senior Engineer - Development of Advanced Power Semiconductor Packaging
Infineon Technologies
- Development of Innovative packaging concepts for power semiconductor modules - Filing IPs
- 2 Jahre und 8 Monate, Feb. 2014 - Sep. 2016
Process Engineer, .XT process, Sintering
Infineon Technologies AG, Warstein
• Directed the development of the latest super junction transistors, focusing on FEOL and BEOL technology development for high-voltage MOSFETs. • Successfully reduced crystal defects in silicon in proximity to electrical contacts to improve device performance. • Engineered novel front and backside metallization concepts and developed a prevention strategy for metal corrosion during die attach. • Led 8D-activities to resolve backend process issues and secured innovations via patent filings.
- 2 Jahre und 3 Monate, Okt. 2011 - Dez. 2013
Technology Development Engineer, High Voltage Mosfet - CoolMos
Infineon Technologies Austria AG, Villach
Development of latest high voltage super junction transistor (CoolMOS
- 2 Jahre und 2 Monate, Sep. 2009 - Okt. 2011
Staff Scientist
Univeristy of Osnabrueck
• Inkjet printing of metals and organic dyes on highly flexible polymer. • Hierarchical Anti-AdhesiveMaterials by Mimicking Insect traps.
Ausbildung von Gopalakrishnan T. Rengarajan
- 4 Jahre und 6 Monate, März 2005 - Aug. 2009
Physics
Martin Luther University Halle-Wittenberg
Polymorphism of acetaminophen under nanoconfinement
- 2 Jahre und 6 Monate, Sep. 2002 - Feb. 2005
Applied Polymer Science
Martin Luther University Halle-Wittenberg
Polymer Physics, Polymer Chemistry, Polymer Characterization and Testing
- 4 Jahre und 1 Monat, Aug. 1997 - Aug. 2001
Polymer Technology
University of Madras
Polymer processing, Mold design and fabrication, Polymer physics, Polymer Chemistry
Sprachen
Englisch
C1 (Fließend)
Deutsch
B1-B2 (Gute Kenntnisse)
Tamil
Hindi
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