Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
Hitachi Energy
Elektrotechnik
Baden AG
- Vollzeit
- 82.500 CHF – 117.500 CHF (von XING geschätzt)
- Vor Ort
- Zu den Ersten gehören

Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
Über diesen Job
Dynamic Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)
The opportunity
The energy landscape is evolving rapidly, requiring power distribution systems of increasing complexity and high reliability. Emerging technologies are adapting to a progressive increase in renewable energy sources and converter interfaces to power new sectors like transportation and industry, which pose new challenges for transmission and distribution operators. Silicon carbide (SiC) power semiconductors have matured in both device fabrication and performance, making them an attractive option for many power electronic designers due to their superior electrical properties. However, despite their recent successful market entry, particularly in electric vehicles, several challenges related to the gate stack reliability of SiC MOSFETs must be addressed to enable widespread adoption across various power electronic applications.
The Semiconductors Packaging and Reliability Engineering research team is looking for an intern student to contribute to the development of an innovative test setup for reliability investigations. Such setup is meant to address the threshold voltage stability of SiC MOSFETs over a large number of cycling events under accelerated application and aging conditions. The successful candidate will run measurement campaigns for SiC devices and help develop a theoretical framework to analyze and model the data. The tests are run on a double pulser tester featuring a half bridge evaluation board rated for 3.3kV and 150A operation.
The position is open at the Hitachi Energy Research Center in Baden-Dättwil, where state-of-the-art packaging cleanroom and close collaboration with Hitachi Energy Semiconductor factory will provide a dynamic, and supportive environment for highly motivated student to succeed in this ambitious project.
How you’ll make an impact
Conduct measurement campaigns and data analysis based on the latest models available in literature
Propose innovative solutions for gathering more insights from the experimental tests: creating sensors array prototypes and automated data collection software
Optimize a half-bridge converter for long-term dynamic testing of SiC MOSFETs
Upgrade test electronics and data acquisition software needed to run high-precision measurements for extended test time
Document and communicate the solutions developed, to disseminate the gained knowledge within the research team, academic collaborators and the business unit of pertinence
Your background
Currently pursuing a M.S. degree in physics, electronics engineering, materials engineering or a related discipline (official enrolment is essential)
Familiar with electrical measurements setup and with the design and construction of electronics systems. Previous experience with semiconductor physics and/or power devices is a strong plus
Experience with LabView programming, and knowledge of programming languages (e.g. Python, C, Matlab)
Fluency in written and spoken English
Good communication and technical writing skills
Creative and able to work autonomously
Gehalts-Prognose
Unternehmens-Details

Hitachi Energy
Elektrotechnik
10.001 oder mehr Mitarbeitende