The opportunity

Are you an experienced semiconductor professional ready to lead cutting-edge R&D projects? Join our world-class team and help shape the future of power electronics through Silicon Carbide (SiC) technology. In this role, you’ll lead the development of next-generation power devices, combining technical depth with project leadership in a collaborative, innovation-driven environment.

How you’ll make an impact

• Lead SiC power device development projects from concept to validation, managing timelines, risks, and resources

• Drive technical activities in device design, process development, and integration

• Collaborate across R&D, engineering, and quality teams to align goals and ensure project success

• Apply structured problem-solving and data analysis to resolve technical challenges

• Contribute to IP generation and stay connected with the global SiC semiconductor community

Your background

• Master’s or PhD in engineering, physics, materials science, or a related field

• Ideally 2 years of experience in the semiconductor industry—ideally in R&D, process integration, or device development

• Solid understanding of semiconductor devices and fabrication processes; SiC experience is a strong plus

• Strong analytical skills and familiarity with tools like SQL, JMP, or fab-floor systems

• Excellent communication skills and a collaborative mindset

• Fluent in English; German is a plus

More about us

We offer a unique opportunity to work in a high-tech environment with access to cutting-edge tools, flexible working conditions, and a culture that values innovation, mentorship, and continuous learning. You’ll be part of a team that’s redefining what’s possible in power electronics.