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Internship - R D CMOS Integration

Internship - R D CMOS Integration

Internship - R D CMOS Integration

Internship - R D CMOS Integration

GLOBALFOUNDRIES

Halbleiter, elektronische Bauteile

Dresden

  • Art der Beschäftigung: Studierende
  • Vor Ort
  • Zu den Ersten gehören

Internship - R D CMOS Integration

Über diesen Job

Internship - R&D CMOS Integration

locations
DEU - Saxony - Dresden
time type
Full time
posted on
Gestern ausgeschrieben
time left to apply
Enddatum: 8. April 2026 (Noch 12 Tage Zeit für Bewerbung)
job requisition id
JR-2502579

About GF
GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.

For more information, visit www.gf.com.

Introduction

GlobalFoundries is a leading full‑service semiconductor manufacturer with advanced fabrication sites across the globe. Our Dresden site (F1) develops and manufactures differentiated CMOS technologies, including 22FDX® – a key enabler for ultra‑low‑power electronics, embedded NVM, and emerging quantum applications. The Technology Architect Group (TAG) is responsible for long‑term technology pathfinding, device research, and cross‑node innovation including ferroelectric memory development, AI hardware enablement, and quantum computing concepts. We are offering a highly selective internship for students with strong technical curiosity and passion for semiconductor devices, ferroelectrics, and advanced CMOS research.

Your Job

As an intern inR&D CMOS Integration, you will work closely with the Technology Architect Group on early‑stage research and exploratory technology development. Your work may include:

Ferroelectric HfO₂ Memory (FeFET / FeCAP)

  • Supporting experimental development of HfO₂‑based ferroelectric memory devices

  • Assisting in material‑ and device‑level characterization (polarization loops, retention, endurance behavior)

  • Processing and analyzing electrical, thermal, and reliability datasets

  • Evaluating integration pathways into 22FDX® FDSOI CMOS flows

AI‑Accelerated Device & Process Development

  • Assisting in development of AI/ML approaches for device variability analysis, defect classification, or predictive modeling

  • Training lightweight neural models for semiconductor data (Python‑based workflows)

  • Research on AI‑assisted pattern recognition and automated data labeling

22FDX‑Based Quantum Computing Concepts

  • Supporting feasibility assessments of quantum‑relevant device structures in FDSOI

  • Reviewing literature on qubit architectures, cryogenic electronics, and ferroelectric quantum materials

  • Contributing to simulation or modelling tasks (e.g., MATLAB, Python, C‑based tools)

General R&D Support

  • Preparing technical documentation, experiment reports, and presentations

  • Participating in cross‑functional meetings with Device Engineering, TCAD, Materials Science and Integration teams

Required Qualification

This internship is ideal for students who are passionate about semiconductor physics, microelectronics, embedded systems, AI‑based engineering workflows, and real‑world device development.

  • Enrollment in Electrical Engineering, Electronics, Semiconductor Devices, Computer Engineering, or similar

  • Foundational knowledge insemiconductors, MOSFET physics, microelectronics, digital design and embedded systems

  • Strong analytical and problem‑solving skills

  • Ability to work independently, manage tasks, and thrive in a research‑focused environment

  • Excellent communication skills in English (C1)

Preferred Qualifications

  • Experience with programming languages such asPython, C, Arduino/ESP32, or parallel programming environments

  • Familiarity with tools likeMATLAB, YOLO, SCADA/PLC systems, mission‑planning software, AutoCAD, or Raspberry Pi

  • Demonstrated hands‑on experience throughtechnical projects, e.g. intensive use and understanding of modern AI tools, demonstration of team-skill in technological project execution , Semiconductor device‑related course projects (e.g., MOSCAP/MOSFET, digital logic, FPGA basics

We offer

  • The opportunity to become part of an open and dynamic team

  • Flexible working hours based on trust

  • Access to professional development opportunities

  • Competitive compensation

  • On-site cafeteria, gym, and physical therapy

  • Additional attractive benefits, such as health promotion programs and various employee discounts

Please include a current proof of enrollment with your application.

Key Details

  • Duration: 3 months

  • Full‑time university internship (3 months)

Information about our benefits you can find here: https://gf.com/careers/opportunities-in-europe/

Unternehmens-Details

company logo

GLOBALFOUNDRIES

Halbleiter, elektronische Bauteile

1.001-5.000 Mitarbeitende

Dresden, Deutschland

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