The wide bandgap of nitrides enables a broad range of high-power and high-frequency applications, spanning from 5G telecom to advanced optoelectronic and, recently, quantum devices. The central goal of this project is to explore the fundamentals of the electronic structure of nitride systems — including their band structure, Fermi surface, electron–electron and electron–phonon interactions, and interfacial band offsets — using soft X-ray angle-resolved photoelectron spectroscopy ARPES. These insights will pave the way for further advances in the performance and functionality of nitride-based devices. The experiments will be conducted at the Advanced Resonant Spectroscopies ADRESS beamline of the Swiss Light Source, the world-leading soft-X-ray ARPES facility with its primary focus on the interface and heterostructure systems, as well as at other synchrotron facilities worldwide. You will also participate in time-resolved ARPES research at the European XFEL. Your work will involve computational modelling of the electronic structure of nitride systems. You will be embedded in a vibrant scientific community at PSI, exploring solid-state systems through a variety of complementary techniques such as ultraviolet ARPES, muon spectroscopy, X-ray and neutron scattering. The project offers extensive collaboration opportunities, both within PSI and with external users of PSI's research facilities, as well as close interactions with theoretical groups during the data analysis and interpretation.

Our institution is based on an interdisciplinary, innovative and dynamic collaboration. You will profit from a systematic training on the job, in addition to personal development possibilities and our pronounced vocational training culture. If you wish to optimally combine work and family life or other personal interests, we are able to support you with our modern employment conditions and the on-site infrastructure.