Ezgi Abacıoğlu

Department of Optoelectronics • Developing InP/InGaAs-based modified uni‑traveling carrier photodiode (MUTC‑PD) chips for THz operation • Performing chip fabrication via cleanroom processing of dielectric and III/V semiconductor materials using photolithography, plasma-assisted deposition and etching, and wafer bonding techniques • Performing experimental characterization of the THz PD chips • Recently reported on the first on‑chip measurements of the ultra‑broadband and high output power THz PDs

• Conducted requirements management process through military standards • Led product review processes benefiting from Design for Manufacture and Assembly (DfMA) approach • Exploited both qualitative (FMECA, FTA) and quantitative (Monte Carlo analysis) methods to serve product based risk management and reliability engineering • Performed reliability analyses for one‑shot systems • Performed configuration control and change management of items/products • Used DOORS, ENOVIA PLM, ERP, and MATLAB actively

Center for Solar Energy Research and Applications (GÜNAM) • Designed and produced one dimensional metal‐dielectric‐metal plasmonic nanowires for low‐loss waveguide and solar cell applications • Deposited highly conformal dielectric thin films on silver nanowires using atomic layer deposition (ALD) • Performed structural, optical and electrical characterization techniques at the nanoscale • Optimized titania and alumina ALD processes • Analyzed electric field confinement in multilayered plasmonic nanowires

Department of Metallurgical and Materials Engineering • Performed indium solder material electrochemical deposition on germanium windows for IR detectors • Optimized electrochemical bath parameters to obtain the desired microstructure for adhesive, mechanically reliable, and hermetic indium solders • Processed aluminum, nickel, and gold electrodeposition on conductive and non‐conductive surfaces with difficult geometries

GPA 3.79/4.00

GPA 3.23/4.00