
Md Sazzad HOSSAIN
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Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Md Sazzad HOSSAIN
- 6 Monate, Dez. 2022 - Mai 2023
Sicoya GmbH
Sicoya GmbH
Electronic Circuit Design Team [0.25um SiGe BiCMOS IHP Process] - Schematic and Layout Verifications (Top Level Electronic ICs, BORA M04 100G TRX Project) - Linear Driver (Variable Gain Amplifier), Inductive Peaking Analysis, BW Boosting, Problematic Nets Finding - IDAC (Current Digital to Analog Converter), Mathematical Modeling - DRC, LVS Check (Assura), Extraction (Quantus), Refined Extracted View Analysis - Understanding the Electro-Optical Interconnects in 100Gb/s PAM4 TX for Server Interconnects
- 2 Jahre und 3 Monate, Sep. 2020 - Nov. 2022
IC Design (Research) Engineer
CNRS-French National Centre for Scientific Research, France
I. Tape-out @November 2022 [0.13um CMOS TSMC] FastSim-EU Project: 2.4GHz PLL design based on Fast Locking Event-Driven Model for IoT Applications; II. Tape-out @June 2021 and Measured [0.35um CMOS AMS] ULTRA Project: High-Frequency Transformer and Solenoid Inductor Design III. Tape-out @March 2021 and Measured [28 FDSOI CMOS STM] OCEAN12 EU Project: 6.3GHz Frequency Synthesizer Design for GNSS and WiFi Applications
- 8 Monate, Jan. 2020 - Aug. 2020
Lecturer
National Institute of Textile Engineering and Research, Bangladesh
Dept. of Electrical and Electronic Engineering Micro-electronics Circuits+ Sessional/Lab
- 1 Jahr und 3 Monate, Okt. 2018 - Dez. 2019
Lecturer
IUS- The International University of Scholars, Dhaka, Bangladesh
Dept. of Electrical and Electronic Engineering Micro-electronics Circuits+ Sessional/Lab; VLSI Design+ Sessional/Lab; Electromagnetism; Wireless Communication
- 2 Jahre, Okt. 2016 - Sep. 2018
Research Assistant/Master’s Student
Frontier Integrated System Laboratory, AdSM, Hiroshima University, Japan
Semiconductor Process-55 CMOS Fujitsu, 40nm CMOS TSMC; - Analog Schematics and Layout Design-60GHz and 79 GHz Transformer Coupled Amplifier - Millimeter-Wave Transformer Design (Stacked and Planner Type) - L-C-L Coupled and Transformer Coupled Matching Network, LNA, PA (Basic Understanding) - MATLAB Modeling, Simulation, and Optimization - EM Simulation of Small Transformer at MOMENTUM and HFSS - 3dB BW, High Gain Amplifier, Noise Analysis, Noise Figure, Output Power, PAE
Ausbildung von Md Sazzad HOSSAIN
- 2 Jahre, Okt. 2016 - Sep. 2018
Semiconductor Electronics and Integration Science
Hiroshima University, Japan
-Awarded, Marks: 80 percentile (above), CGPA: 3.94/4.00 [calculated on US Scale]; M.Sc. Thesis (Device): “Design of CMOS On-Chip Transformers for Millimeter-Wave Amplifiers”. [Fujitsu DDC 55nm CMOS]
- 4 Jahre und 10 Monate, März 2010 - Dez. 2014
Electrical and Electronic Engineering (EEE)
Rajshahi University of Engineering and Technology (RUET), Bangladesh
- 1st Class, Marks: 70.80 Percentile, CGPA:3.34/4.00; B.Sc. Thesis (System):” Future Internet Technologies: Hybrid CO-OFDM TWDM PON and WLAN System for FiWi Amelioration; [4G LTE-A, Passive Optical Network, MATLAB Simulation]
Sprachen
Englisch
Fließend
Bengali
Muttersprache
Französisch
Grundlagen
Japanisch
Grundlagen
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