The Leibniz-Institut für Kristallzüchtung (IKZ) is a leading research institution in the field of science & technology as well as service & transfer of crystalline materials. Our goal is to enable solutions for pressing societal challenges (e.g. communication, artificial intelligence, climate protection, health, etc.) through modern electronic & photonic technologies. The work covers the entire spectrum from basic and applied research to pre-industrial development and is carried out in cooperation with national and international partners from universities, academies and industry. The institute is part of the Forschungsverbund Berlin ( https://www.fv-berlin.de/ ) and a member of the Leibniz Association ( https://www.leibniz-gemeinschaft.de ). You can find more details on the institute webpage: https://www.ikz-berlin.de .

We are seeking a

"SiGe based bulk crystals for quantum technologies”



The Semiconductor Section is internationally well recognized for its expertise in the growth of bulk semiconductor crystals, employing a broad range of melt-growth techniques. Our research spans both fundamental and application-oriented studies of classical semiconductor materials, including silicon, germanium, SiGe alloys, and III–V compounds. Czochralski (Cz) growth of bulk crystals is a unique expertise of our institute and is one of the main research activities of the semiconductor section. High-quality Si, Ge, and SiGe crystals with tailored material properties enable a wide range of applications in energy-efficient electronics, photonics, and quantum computing. We maintain close collaborations with leading semiconductor industries, facilitating the transfer of materials and technologies toward industrial applications. Supported by state-of-the-art laboratory infrastructure and a range of pre-industrial-scale Cz crystal pullers, our facilities enable the growth of Si and Ge crystals with diameters of up to 6 inches.

Building on this expertise, we aim to expand our bulk crystal growth capabilities toward the development of quantum-grade bulk substrates. To this end, we are establishing a junior research group dedicated to developing a group-IV mixed-crystal platform for advanced semiconductor substrates. The junior research group will focus on SiGe and GeSn as promising substrate materials for CMOS-compatible quantum technologies, with particular emphasis on the development of larger-diameter, ultra-pure mixed crystals. Key research objectives will include crystal diameter scale-up, defect reduction, compositional homogeneity, and precise control of electrical properties to meet the stringent material requirements of quantum devices. By integrating advanced bulk crystal growth with device-driven material specifications, the group will establish scalable, high-quality substrate platforms tailored to the requirements of next-generation, CMOS-compatible quantum technologies.

Key Responsibilities:

• Develop growth process strategies for high-quality SiGe, GeSn mixed crystals.
• Foster strong collaborations with scientists in material characterization and epitaxial growth to drive interdisciplinary researc
• Develop and lead an internationally recognized research program building on IKZ's expertise in bulk crystal growth.
• Initiate and establish partnerships with industries to pursue innovative, application-oriented research.
• Secure competitive third-party funding.
• Supervise and mentor PhD students.

Requirements:

• PhD in physics, chemistry, crystallography, materials science, or a related discipline with a strong background in semiconductor materials.
• Demonstrated research experience and a strong track record in bulk crystal growth.
• Solid understanding of solid-state physics, thermodynamics, and materials science.
• Ability to work within an interdisciplinary team of scientists, engineers, and students.
• Strong scientific communication skills, including the ability to present research findings and contribute to high-quality scientific publications.

Desirable:

• Experience in securing third-party research funding.
• Expertise in Group-IV semiconductor bulk crystal growth.
• Experience in establishing collaborations with academic and industrial partners.

For further information, please contact: Priv.-Doz. Dr. R. Radhakrishnan Sumathi,
Tel.: +49(0)30 246 499 401, radhakrishnan.sumathi@ikz-berlin.de .

What we offer
The position is initially limited to three years. Payment is according to TVöD Bund (E14) (Treaty for German public service) including the usual social benefits (30 vacation days in a 5-day week, flexible working hours).

The Leibniz-Institut für Kristallzüchtung actively supports a healthy work-life balance and is an equal opportunities employer. Female candidates are encouraged to apply and will be given preference if suitably qualified. Among equally qualified candidates, preference will be given to candidates with disabilities. IKZ promotes diversity. We welcome every qualified application, regardless of age, belief, disabilities, ethnic origin, gender, nationality, religion, or sexual orientation.

Have we aroused your interest?
Then apply with a letter of motivation, curriculum vitae and all relevant certificates. To do so, please go to Job offers/jobs on our website, click on this advertisement and then on "Apply online". Applications will be accepted until the position is filled.

We look forward to receiving your application.