Fred Fang

 Develop and consult for device used for very low power RF design  Develop and characterize with TSMC for a leading 40nm Ultra Low Power technology, extend the technology also for near Vt design  HV and high headroom device added for PMU and analog design  NVM(ESF3, SONOS) embedded flash added into 40nm platform  Ring Oscillator sensor characterization for Vdd scaling and systematic variation reduction  Technology benchmark(40nm,28nm) for low power wireless product

 CMOS Device performance improvement and device parameters stablization on a 28nm HKMG platform.  Device analysis for yield improvement and production ramp up for a 32nm HKMG SOI technology.

- Project leader for a CMOS integrated optical sensor project - Participate in transferring a 0.35um mix-signal process and help to find root cause for 3 Problems - Participate in setup the stitching technology for X-Ray imaging chip for medical usage - Pre-project of Infra-red bolometer based on Amorphous Si for night visible device - Magnetic sensor, pH sensor

Physicals, Materials,semiconductors, statisticals