Dr. Irene Bartusseck

Responsible for setup and enhancing of TSV (Through-Silicon-Via) Copper electrochemical plating process for 2.5D and 3D wafer-level system integration. TSV dimensions between 3-15 µm diameter and up to 150 µm depth or Cu-liner fill of TSVs from wafer backside. Also responsible for setup of TGV (Through-Glass-Via) Copper electrochemical plating. Supplier selection for TSV electrolytes. Track and control analytics of TSV and RDL electrolytes. Close interaction with ECD tool and chemistry supplier.

Responsible for Unit Process Development and process engineering of Wet Clean and Wet Etch processes such as RCA Clean, DHF etch and clean, phosphoric acid nitride removal, BSG etch and HF/EG for high volume production. Ensure process stability and quality in production (SPC) and optimization (FMEA). In charge of megasonic cleaning improvement. Qualification of new wet cleaning and wet etching tools and the corresponding processes on the tool.

PhD Thesis in the area of NMR Imaging and NMR diffusion measurements. Working on the Collaborative Research Center "SFB 540 Model-based experimental analysis of kinetic phenomena in fluid multi-phase reactive systems". Measurement of intradiffusion coefficients of various liquid mixtures as well as measuring interdiffusion phenomena with NMR. Responsible for the supervision of students in the practical course of macromolecular chemistry.

NMR Bildgebung, Kernspintomographie, NMR Flussbildgebung, Diffusion, Physikalische Chemie, Makromolekulare Chemie

Anorganische Metallchemie

Makromolekulare Chemie, NMR, Physikalische Chemie