Dr. Mahmoud Al Humaidi
Angestellt, Expert Technology Epitaxy, AZUR SPACE Solar Power GmbH
Heilbronn, Deutschland
Über mich
I have successfully defended my PhD thesis on October 2021. My PhD research focused on growth and characterization of semiconductor nano-wires (NWs). I used vapor-liquid-solid (VLS) mechanism for NWs fabrication in molecular beam epitaxy (MBE). I also performed X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques to characterize the crystal structure and the elastic properties of the NWs. These properties are essential for band-gap tuning for different semiconductor NW-based applications in photonic, electronic and optolectronic devices. My master research focused on studying the effect of doping concentration of Eu3+ ions on the lattice parameters of the host crystal structure of Sc2O3 nano-particles. This study was done by means of X-ray diffraction (XRD), extended X-ray absorption fine structure (EXAFS) and photoluminescence spectroscopy technics.
Werdegang
Berufserfahrung von Mahmoud Al Humaidi
Material development of multi-junction solar cells for space application.
- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
2 Jahre und 1 Monat, Okt. 2020 - Okt. 2022
Postdoctoral Researcher
KIT - Karlsruher Institut für Technologie- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
- Supervisor of X-ray reflectometery (XRR) experiment - Laboratory preparator of laser laboratory for ”Visible light Laue diffraction” experiment
1 Jahr und 1 Monat, März 2012 - März 2013
Physic and mathematics teacher
Ratlah intermediate school, Al-Raqqa, Syria
Ausbildung von Mahmoud Al Humaidi
4 Jahre und 2 Monate, Sep. 2017 - Okt. 2021
Experimental Physics
Universität Siegen
3 Jahre und 7 Monate, Apr. 2013 - Okt. 2016
Physics
Universität Siegen
Structural and Spectroscopic Analysis of Lanthanide doped Nanoparticles
6 Jahre und 6 Monate, Okt. 2005 - März 2012
Physics
Tishreen University
Sprachen
Englisch
Fließend
Deutsch
Grundlagen
Arabisch
Muttersprache