
Dr. Mahmoud Al Humaidi
Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Mahmoud Al Humaidi
- Current 3 years and 8 months, since Oct 2022AZUR SPACE Solar Power GmbH
Expert Technology Development Epitaxy
Semiconductor materials development of III-V multi-junction solar cells for space applications • MOVPE process optimization of the material yield and quality for high performance solar cells • Planning and designing test structures and realizing the characterization methods • Material analysis by X-ray diffraction (XRD), Photolumiscence (PL), Electrochemical Capacitance-Voltage (ECV) and Atomic force microscopy (AFM) • Monitoring the solar cell performance and correlate with the material properties
- 2 years, Nov 2020 - Oct 2022
Research Scientist
KIT - Karlsruher Institut für Technologie
- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
- 2 years and 1 month, Oct 2020 - Oct 2022
Postdoctoral Researcher
KIT - Karlsruher Institut für Technologie
- 1 year and 1 month, Oct 2020 - Oct 2021
Researcher
KIT - Karlsruher Institut für Technologie
- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
- Fabrication of semiconductor (GaAs) nanowires on Si substrates using vapor-liquid-solid mechanism (VLS) in molecular beam epitaxy (MBE) at KIT-Karlsuhe) - In-situ investigation of the crystal structure of the NWs during growth using X-ray diffraction (XRD) technique by means of synchrotron radiation -In-situ XRD measurement of the NWs during heteroepitaxial growth of (In,Ga)As shell on GaAs NW side walls and monitoring the evolution of NW bending that results from the induced lattice-mismatch strain
- Supervisor of X-ray reflectometery (XRR) experiment - Laboratory preparator of laser laboratory for ”Visible light Laue diffraction” experiment
- 1 year and 1 month, Mar 2012 - Mar 2013
Physic and mathematics teacher
Ratlah intermediate school, Al-Raqqa, Syria
Ausbildung von Mahmoud Al Humaidi
- 4 years and 2 months, Sep 2017 - Oct 2021
Experimental Physics
Universität Siegen
- 3 years and 7 months, Apr 2013 - Oct 2016
Physics
Universität Siegen
Structural and Spectroscopic Analysis of Lanthanide doped Nanoparticles
- 6 years and 6 months, Oct 2005 - Mar 2012
Physics
Tishreen University
Sprachen
English
C1 (Fließend)
German
A1-A2 (Grundkenntnisse)
Arabic
C2 (Verhandlungssicher / Muttersprachlich)
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