Dr. Marco Englhard

- Leading advanced technology development activities for next-generation packaging and interconnection solutions in Si and SiC power electronics (inverter applications), within the Department Center of Competence for Assembly & Interconnection Technologies (AIT) - Driving prototyping and validation activities across multiple interconnection technologies, including lead-free soldering, Ag sintering and advanced analysis and characterization - Technology scouting and benchmarking for Si & SiC inverter

- Development of next-generation AMB (Active Metal Brazing) and DCB (Direct Copper Bonding) substrates (several patent applications) - Led cross-functional project teams of more than 30 members in an agile project environment - Coordinated customer-facing technical discussions and development activities with international stakeholders - Served as Business Unit Owner for product development processes aligned with APQP methodology

- Responsible for epitaxy processes supporting industrial-scale production of advanced LED semiconductor structures (e.g. GaN, InGaN, AlGaAs, InGaAlP) - Coordinated cross-functional technology and equipment initiatives in a high-volume manufacturing environment - Led audit activities for the nitride epitaxy production area, ensuring process robustness and product quality

Development of arsenide- and phosphide-based TF-LED chip technologies; Title of Doctoral Thesis: Epitaxial lift-off processes for InGaAlP thin-film LEDs for GaAs substrate reuse. - Development of novel manufacturing processes in a production environment to reduce manufacturing costs of highly complex LED products - Structural and crystallographic characterization of semiconductor materials - 3 peer-reviewed scientific publications - 4 national & international patent applications

- Research Assistant at the Faculty of Microsystems Engineering (Competence Center Nanochem, Nanoanalytics & Semiconductor Chemistry) collaborating with Infineon Technologies AG, Regensburg, Germany - Master's Thesis: “Characterization of Graphene Layers Using Various Analytical Techniques” (Grade: 1.0) - Specialized in Semiconductor Device Physics, Semiconductor Chemistry, Statistical Design of Experiments (DoE), and Probability Theory - Recipient of the Germany Scholarship

- Completed an internship semester at the Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany - Best Graduate of the Year - Awarded the Presentation Prize by Regensburg University of Applied Sciences - Bachelor's Thesis: “Deposition of Carbon from Various Precursors” (Grade: 1.0) - Specialized in Microelectronics Technology, Packaging, Analytics, Materials

- Applied theoretical and practical expertise in electro-pneumatics, electro-hydraulics, electrical engineering, electrical machines and motors, control systems engineering, PLC programming, industrial automation and analog/digital electronics - Performed precision machining of metal components using semi-automatic turning and milling equipment