Dr. Moritz Völker

Guided ISDA business decision to release beta quality PDK for 28 nm node. Developed FET models for evaluation PDKs of ISDA’s 20 nm bulk technology

Owned key device models for all PDK releases of ISDA’s 32 and 28 nm high-k metal gate low power technologies. Improved modeling methodology and device targeting process. Assured model quality of entire 32 and 28 nm FET models. Led transition to new PSP model version 103.

Supported extraction of compact models of silicon field-effect transistors. Introduced device corner comparison tool.

Advanced the state of research in biosensorics and brain-computer-interfacing. First to record the activity of individual mammalian neurons non-invasively. Improved the signal-to-noise ratio of neurotransitors up to the thermodynamic limit. Invented transparent silicon field-effect transistors

Koppelung von Siliziumtransistoren mit Nervenzellen