Ronny Schneider

Bis 2013, Senior DRAM Design and Verification Engineer, Elpida Memory GmbH
Muenchen, Germany

Fähigkeiten und Kenntnisse

Profound knowledge in DRAM design and verification
China and the USA. Team leading experience. High

Werdegang

Berufserfahrung von Ronny Schneider

  • Current 12 years and 11 months, since Jul 2013

    Principal DRAM Design and Verification Engineer

    Micron Technology, Inc.

    GDDR5/5X/6 graphics DRAM design and verification; team lead

  • 4 years and 2 months, Jun 2009 - Jul 2013

    Senior DRAM Design and Verification Engineer

    Elpida Memory GmbH

    GDDR5 graphics DRAM Design & Verification, team lead

  • 3 years, Apr 2006 - Mar 2009

    Staff DRAM Design and Verification Engineer

    Qimonda AG

    Design of a high speed GDDR5 graphics DRAM interface managing tight interface timings for up to 6Gbps in 2 technology nodes (full chip verification, block design in VERILOG, redesign)

  • 1 year and 5 months, Nov 2004 - Mar 2006

    Senior DRAM Design Engineer / Head of design team

    Infineon Technologies Co., Ltd., PR China

    Head of design team for a DDR2 DRAM shrink (to 90nm) with responsibility for 16 engineers, chip implementation and evaluation. Training of design team members (all new hires, fresh from university). Technical expert for x/ydec, global control, redundancy, full chip verification.

  • 3 years and 6 months, May 2001 - Oct 2004

    DRAM Design Engineer

    Infineon Technologies NA Corp., USA

    Design of DDR DRAM circuit blocks in 110nm technology (ydec, redundancy). Design of DDR2 DRAM blocks in 110nm technology (global control, redundancy, full chip verification). Design verification, layout and layout verification. Support of analysis and evaluation at probe station in test lab. Redesigns comprising design and layout.

Ausbildung von Ronny Schneider

  • 5 years and 6 months, Sep 1995 - Feb 2001

    physics

    Friedrich-Schiller-University of Jena

    theoretical and applied physiks; computer science (minor); thesis: noise measurements on single-electron-transistors

Sprachen

  • German

    C2 (Verhandlungssicher / Muttersprachlich)

  • English

    C1 (Fließend)

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