Sabrina Sterzl

I independently perform cutting edge research on semiconducting nanostructures (nanowires) by using different spectroscopy methods, such as photoluminescence and terahertz. My samples are fabricated using different growth methods, crystal structures and materials. The most interesting sample were hexagonal silicon-germanium nanowires which are predicted to have a direct bandgap. I also developed a new mid-infrared Fourier Transform Photoluminescence system.

I fabricated InAs nanowire devices in the cleanrooms of the center of micronanotechnology and characterised their electronic properties with 4-point probe and photocurrent measurements. methods used: optical microscopy, E-beam lithography, evaporation, sputtering, 4-point probe

Training on transmission electron microscope and sample preparation

I improved electrical and optical properties of InAs nanowires by surface passivation with atomic layer deposited Al2O3. methods used: atomic layer deposition; argon milling; sample pretreatment; X-ray photoelectron spectroscopy

I was self-responsible for the development of a setup enabling anodic bonding of graphene and I investigated different fitting methods for spectra obtained with Raman spectroscopy.

I was member of the project "Move 2 Warp" which designed an antiproton detector as a load for a satellite. I researched about the background radiation and I examined and characterised the materials intended to be used for the detector.

semiconductors; nanowires; spectroscopy (terahertz, photoluminescence, photocurrent); lasers;

semiconductors, lasers, optics, nanostructures, nanofabrication

Bachelor's thesis: Aufbau und Charakterisierung eines neuartigen Hochfrequenz-Ionenleiters für hochmolekulare Ionen