
Shahinur Rahman
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Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Shahinur Rahman
- Current 12 years and 3 months, since Mar 2014
Project Manager
TUKWILA
The key responsibilities are business management, marketing and customer advisory.
- 1 year and 10 months, Sep 2012 - Jun 2014
Research Scientist
NaMLab gGmbH
'Research Scientist' I developed a new reliability test technique “Time Dependent Defects Spectroscopy” TDDS. TDDS is now used for Device Reliability Characterization at NamLab. I used other well-known reliability techniques such as, BTI, TSCIS, SILC, Charge pumping & TDDB. I also worked on the reliability testing of GaN-Si MOS based, high k, devices using HfO2, ZrO2 & Al2O3 dielectric materials.
- 6 months, Jun 2011 - Nov 2011
Research Scientist-Detector Expert
Oncoray Univerity Hostpital -Technical University Dresden
“Semiconductor Detector Expert” This involved characterization the electronic properties of the compound semiconductor CdZnTe (CZT), to optimize the proton sensing ability of the detector. A prototype detector was successfully made and tested.
- 2 years, Jun 2009 - May 2011GSI Helmholtzzentrum für Schwerionenforschung
Research Scientist- Marie Curie Postdoctoral Experienced Researcher
“Marie-Curie Postdoc Fellow, Experienced Researcher” I was responsible for the electrical and optical characterization of heteroepitaxial CVD Diamond materials for sensor applications. During this time I successfully set up a characterization lab for this purpose. I investigated bulk defects, metal contact problems and the effects of radiation damage. I established a clear test & characterization procedure with clear reports, still in use.
- 4 years and 3 months, Mar 2005 - May 2009
Researcher
University of Ioannina
As part of a European wide project I worked on the electrical, structural and reliability characterization of Ge based MOS devices. I was responsible for the successful setting up of a small reliability test lab. I worked on the reliability of Ge-based MOS devices, rare-earth oxides REOs (CeO2, Dy2O3, La2O3) and their gate stacks, e.g. Ge/REOs/HfO2. In these materials I discovered Maxwell-Wagner Instabilities and was subsequently awarded the International IEEE Reliability Scholarship for my work.
Ausbildung von Shahinur Rahman
- 3 years and 3 months, Mar 2005 - May 2008
Physics- Semiconductor & Materials Science
University of Ioannina
My studies in PhD included the current-voltage (I-V), current transient (I-t), capacitance-conductance-voltage (C-V-G), capacitance transient (C-t), X-ray reflectivity (XRR), X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), Transmission electron microscopy (TEM) measurements.
- 1 year and 5 months, Nov 2000 - Mar 2002
Physics
University of Dhaka
Electronics, Quantum Mechanics, Nuclear Physics, Laser Physics. Thesis Title: 'Radiation Detection and measurement using CR-39 NTA films'.
- 4 years and 3 months, Aug 1996 - Oct 2000
Physics
University of Dhaka
Physics, Mathematics, Statistics in Bachelor of Science Levels.
- 6 years and 4 months, May 1989 - Aug 1995
General Science
Pabna Cadet College, Bangladesh
General Science, Mathematics, Bengali, English, Engineering Science, Geography, Social Science
Sprachen
German
B1-B2 (Gute Kenntnisse)
English
C1 (Fließend)
Greek
B1-B2 (Gute Kenntnisse)
Arabic
A1-A2 (Grundkenntnisse)
Bengali
Hindi
Urdu
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