
Shahinur Rahman
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Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Shahinur Rahman
- Bis heute 11 Jahre und 2 Monate, seit März 2014
Project Manager
TUKWILA
The key responsibilities are business management, marketing and customer advisory.
- 1 Jahr und 10 Monate, Sep. 2012 - Juni 2014
Research Scientist
NaMLab gGmbH
'Research Scientist' I developed a new reliability test technique “Time Dependent Defects Spectroscopy” TDDS. TDDS is now used for Device Reliability Characterization at NamLab. I used other well-known reliability techniques such as, BTI, TSCIS, SILC, Charge pumping & TDDB. I also worked on the reliability testing of GaN-Si MOS based, high k, devices using HfO2, ZrO2 & Al2O3 dielectric materials.
- 6 Monate, Juni 2011 - Nov. 2011
Research Scientist-Detector Expert
Oncoray Univerity Hostpital -Technical University Dresden
“Semiconductor Detector Expert” This involved characterization the electronic properties of the compound semiconductor CdZnTe (CZT), to optimize the proton sensing ability of the detector. A prototype detector was successfully made and tested.
- 2 Jahre, Juni 2009 - Mai 2011GSI Helmholtzzentrum für Schwerionenforschung
Research Scientist- Marie Curie Postdoctoral Experienced Researcher
“Marie-Curie Postdoc Fellow, Experienced Researcher” I was responsible for the electrical and optical characterization of heteroepitaxial CVD Diamond materials for sensor applications. During this time I successfully set up a characterization lab for this purpose. I investigated bulk defects, metal contact problems and the effects of radiation damage. I established a clear test & characterization procedure with clear reports, still in use.
- 4 Jahre und 3 Monate, März 2005 - Mai 2009
Researcher
University of Ioannina
As part of a European wide project I worked on the electrical, structural and reliability characterization of Ge based MOS devices. I was responsible for the successful setting up of a small reliability test lab. I worked on the reliability of Ge-based MOS devices, rare-earth oxides REOs (CeO2, Dy2O3, La2O3) and their gate stacks, e.g. Ge/REOs/HfO2. In these materials I discovered Maxwell-Wagner Instabilities and was subsequently awarded the International IEEE Reliability Scholarship for my work.
Ausbildung von Shahinur Rahman
- 3 Jahre und 3 Monate, März 2005 - Mai 2008
Physics- Semiconductor & Materials Science
University of Ioannina
My studies in PhD included the current-voltage (I-V), current transient (I-t), capacitance-conductance-voltage (C-V-G), capacitance transient (C-t), X-ray reflectivity (XRR), X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), Transmission electron microscopy (TEM) measurements.
- 1 Jahr und 5 Monate, Nov. 2000 - März 2002
Physics
University of Dhaka
Electronics, Quantum Mechanics, Nuclear Physics, Laser Physics. Thesis Title: 'Radiation Detection and measurement using CR-39 NTA films'.
- 4 Jahre und 3 Monate, Aug. 1996 - Okt. 2000
Physics
University of Dhaka
Physics, Mathematics, Statistics in Bachelor of Science Levels.
- 6 Jahre und 4 Monate, Mai 1989 - Aug. 1995
General Science
Pabna Cadet College, Bangladesh
General Science, Mathematics, Bengali, English, Engineering Science, Geography, Social Science
Sprachen
Deutsch
Gut
Englisch
Fließend
Griechisch
Gut
Arabisch
Grundlagen
Bengali
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Hindi
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Urdu
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