
Dr. Thomas Altebaeumer
Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Thomas Altebaeumer
- Current 3 years and 9 months, since Oct 2022
Director of Innovation
Oxford Instruments
- 1 year and 3 months, Aug 2021 - Oct 2022
IP Strategy Director
Renesas Electronics
- 1 year and 11 months, Oct 2019 - Aug 2021
IP Strategy Director
Dialog Semiconductor
- 3 years and 6 months, Apr 2016 - Sep 2019
Senior IP Strategy Manager
Dialog Semiconductor
Developing and managing corporate IP portfolio
- 4 years and 8 months, Aug 2011 - Mar 2016
IP Strategy Manager
Dialog Semiconductor
Manage and develop corporate IP portfolio
- 1 year and 2 months, Nov 2011 - Dec 2012
Independent Expert
European Commission
- 2 years and 4 months, Apr 2009 - Jul 2011
Research Assistant
University of Oxford
Organic photovoltaic devices, graphene, autoradiography
- 3 years and 4 months, Sep 2005 - Dec 2008
Senior Scientist and Patent Leader
Sharp Laboratories of Europe
Silicon-on-glass/silicon-on-polymer technologies: process flow development, device characterisation, development of patent porfolio
- 1 year and 11 months, Oct 2003 - Aug 2005
PostDoc
IBM Zurich Research Laboratory
Data storage devices, thermomechanical nanoindentations and polymer physics
- 1 year and 6 months, May 2002 - Oct 2003
Wissenschaftlicher Mitarbeiter (Scientific Associate)
University of Tübingen
Nanobiotechnology
- 2 years, Oct 1996 - Sep 1998
Studentische und wissenschaftliche Hilfskraft (Scientific Assistant)
RWTH Aachen
Dielectric materials
- 4 months, May 1996 - Aug 1996
Industriepraktikant
Zentrum Mikroelektronik Dresden
Gate dielectrics
- 7 months, Oct 1995 - Apr 1996
Research Student
National Microelectronics Research Centre Ireland
Laser interferometry
Ausbildung von Thomas Altebaeumer
- 8 months, Nov 2010 - Jun 2011
Technology and Innovation Strategy
Saïd Business School, University of Oxford
- 1 year, Oct 2010 - Sep 2011
Gewerblicher Rechtsschutz (Intellectual Property)
University of Hagen
- 3 years and 7 months, Oct 1998 - Apr 2002
Physics
University of Cambridge
Micro- and Nanofabrication, Silicon-based Nanoscale Devices
- 6 years and 2 months, Oct 1991 - Nov 1997
Electrical Engineering
RWTH Aachen
Semiconductor Technology, Semiconductor Devices, Solid State Physics
Sprachen
English
C1 (Fließend)
German
C2 (Verhandlungssicher / Muttersprachlich)
French
A1-A2 (Grundkenntnisse)
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