Beenish Khadim

1) Built and configured helium ion microscopy test setups, including sample mounting, beam alignment, detector positioning (SE and transmission), and vacuum readiness verification. 2) Executed SE, STIM, and transmission measurements to evaluate signal stability, contrast behavior, spatial resolution, and detector acceptance under varying beam conditions. 3) Implemented and verified Time-of-Flight (ToF) measurement workflows by synchronizing beam blanking and detector timing for energy-loss analysis. 4) Perf

Key concepts on the interaction between matter and radiation, radiation effects on electronic devices, RHA (Radiation Hardness Assurance), Monte Carlo simulations, and training on OMERE and FASTRAD software.

1. Conducted multiple experiments on radiation-induced attenuation (RIA) in optical fibers, including SMF-28e+, P-doped fibers, and FD-7 glass dosimeters under X-ray irradiation. 2. Measured the spectral RIA in optical fibers at various wavelengths, investigating the effects of radiation exposure on transmission and attenuation, and explored the linearity of RIA with respect to dose. 3. Utilized various dosimeters such as P-doped fibers and FD-7 glass dosimeters to study their performance as potential radia

1. Performed elemental analysis and depth profiling of TiO, AlO, and Si:H thin films using ERDA with Time-of-Flight Spectrometry and Helium Ion Microscopy (HIM). 2. Calibrated detectors and processed ToF-Energy data in Potku to analyze impurity levels, elemental ratios, and sputtering effects. 3. Gained hands-on expertise in ion-beam-based surface analysis techniques relevant to semiconductor and optical material research.

1. Worked on Photonic integrated circuits. 2. Understood how to incorporate photonic devices and elements into traditional microelectronic circuits to create new, hybrid systems with unique properties and capabilities

1. Pristine graphene properties were successfully simulated using DFT and are found to be in agreement with the literature. 2. Phosphorus-doped graphene and defected graphene have much more quantum capacitance than pristine graphen. 3. The quantum capacitance is improved due to the introduction of new states near the Fermi level due to doping and defects.

Short Project: Characterization of optical materials under X-ray irradiation and their use for dosimetry. Courses: : Laser Physics, Optical engineering, Advanced Photonic and Optoelectronic Technologies,Radiation Effects on Photonic and Optoelectronic Technologies,Digital Innovation and Entreprene

Courses: Applied Semiconductor Physics, Electron, Photon and Ion Beam Methods in Material Science, Numerical Methods in Physics, Measuring Techniques and Systems , Electronics A. Electronics B, Electronics Workshop Workshop: Basics of Radiation Environments and Challenges Related to Radiation Effe