Dipl.-Ing. Martin Fürfanger (MBA)

Angestellt, Project Manager, Infineon Technologies AG, Munich
Abschluss: MBA in Systems and Project Management, Hochschule für angewandte Wissenschaften Landshut (Grade: 1.0))
München, Germany

Fähigkeiten und Kenntnisse

Projekt Management
System Engineering
Halbleitertechnologie
Marketing Management Prozess
MBA: Systems and Project Management
Technischer Betriebswirt IHK
E-Commerce: Business & Technology
Silicon Valley Startup Erfahrung
McKinsey-Portfolioanalyse
Experte Technologieentwicklung Anlagenbau
Experte Prozessentwicklung Prozessoptimierung
Verbundkoordinator Förderprojekte
Halbleiterphysik
Siliziumtechnologie
Halbleiterlaserdioden
Silicon-on-Insulator SOI
CIS Dünnschichtsolarzellen
statistische Prozesskontrolle SPC
statistische Versuchsplanung DoE
lean six sigma
Systemmodellierung
CVD Epitaxie

Werdegang

Berufserfahrung von Martin Fürfanger (MBA)

  • Current 4 years and 7 months, since Nov 2021

    Project Manager

    Infineon Technologies AG, Munich

    Chip Development for E-Mobility

  • 7 years and 2 months, Oct 2014 - Nov 2021

    Principal Development Engineer

    AVANCIS GmbH

    I am the head of key strategic projects to develop new technology generations in the core processes of the AVANCIS technology, e.g. to form the compound Cu(In,Ga)(S,Se)2 semiconductor (RTP). Leading of cross-functional and international project teams including cooperation with well-known equipment suppliers and research institutes.

  • 7 years and 2 months, Aug 2007 - Sep 2014

    Project Leader Engineering and Equipment Development

    Avancis GmbH

    I was the head of the research project CIS-Clustertool funded by the Federal Ministry of Education and Research (BMBF). The four industrial partners successfully developed new processes and innovative equipment concepts. As a process owner, I was fully responsible for several technology transfers from R&D to mass production. Coordinated and led risk assessments (HAZOP/FMEA), risk mitigation projects and cost cutting programs.

  • 3 years and 10 months, Oct 2003 - Jul 2007

    Development Engineer

    AVANCIS GmbH

    Deputy of the pilot line manager. Responsible for organization, throughput and yield improvement of the R&D pilot line. Responsibility for the Cu(In,Ga)(S,Se)2 semiconductor formation process.

  • 6 months, Apr 2003 - Sep 2003

    Production Engineer Front-End

    Vertilas GmbH

    Responsible for the frontend semiconductor processing of vertical-cavity surface-emitting lasers (VCSEL). Running physical vapor deposition processes like sputtering and evaporation, lithography, dry/wet etching and electroplating.

  • 3 years and 7 months, Sep 1999 - Mar 2003

    Senior Epitaxy Process Engineer

    Silicon Genesis Corporation (Silicon Valley, CA - USA)

    Head of technology and process development in the field of CVD Epitaxy. Developed and optimized epitaxial processes such as strained and relaxed SiGe layers as well as Si/SiGe heterostructures for the fabrication of Silicon-on-Insulator (SOI) wafers. Managed three installations of a 200 mm Chemical Vapor Deposition (CVD) Epitaxy reactor from the vendor Applied Materials.

  • 1 year and 11 months, Oct 1997 - Aug 1999

    300mm Epitaxy Process Development Engineer

    Siltronic AG

    Managed all process-related aspects of an AMAT 300 mm epitaxial reactor. Performed three CVD tool demos at AMAT in Santa Clara, USA. Led cost-cutting projects

  • 3 months, Jun 1997 - Aug 1997

    Project Leader

    Siltronic AG (Portland, OR - USA)

    Implemented software application from thesis + process optimization.

  • 3 months, Jun 1997 - Aug 1997

    Project Leader (Portland, OR - USA)

    Siltronic AG

    Implemented software application from thesis + process optimization

  • 9 months, Sep 1996 - May 1997

    Diploma thesis at the 200 mm epitaxial process engineering department

    Siltronic AG

    Created a software suite for an automatic data logging and analysis of a Centura Epitaxy Reactor (AMAT) and its use for process optimization.

  • 2 months, Feb 1996 - Mar 1996

    Working student at the 200 mm epitaxial process engineering department

    Siltronic AG
  • 3 months, Jul 1995 - Sep 1995

    Working student at the 200 mm epitaxial process engineering department,

    Siltronic AG
  • 6 months, Feb 1995 - Jul 1995

    Second Internship

    Siltronic AG

    Process optimization on the ASM single-wafer epitaxial reactor Epsilon One. Characterized defects to conduct a root cause analysis and thus to improve quality and yield.

  • 5 months, Oct 1993 - Feb 1994

    First Internship

    BLV Licht- und Vakuumtechnik GmbH

Ausbildung von Martin Fürfanger (MBA)

  • 2 years and 3 months, Oct 2012 - Dec 2014

    Master of Business Administration

    Hochschule für angewandte Wissenschaften Landshut (Grade: 1.0))

    Project Management, System Engineering and Management, Corporate Governance and Law, Social Skills and Leadership, Management Systems, Industrial Marketing, Marketing and Sales Projects, Competitor and Industry Analysis, McKinsey Portfolio Analysis

  • 1 year and 5 months, Jun 2000 - Oct 2001

    E-Commerce

    UC Berkeley, CA - USA (Awarded with Distinction)

    Crafting the E-Business Model, E-Commerce Systems Engineering, Transforming Business with the Internet, E-Business Leadership and Organizational Design, E-Commerce Strategies, Business Engineering for E-Commerce, E-Commerce Business and Technology

  • 2 years and 9 months, Oct 1996 - Jun 1999

    Technischer Betriebswirt

    IHK Munich (Awarded with "Meisterpreis")

    Economics and business administration. Accounting, controlling, investments, taxes, logistics, production and sales. Organization and corporate management. Human resources. Information and communication technologies.

  • 5 years and 10 months, Oct 1991 - Jul 1997

    Physikalische Technik

    Hochschule für angewandte Wissenschaften München (Grade 1.8))

    Technical physics, physical chemistry, electrical engineering, physical process engineering, atomic and solid state physics, laser technology, technical optics, vacuum technology, physics of thin films, physical processes in medicine, control engineering

Sprachen

  • German

    C2 (Verhandlungssicher / Muttersprachlich)

  • English

    C1 (Fließend)

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