Martin Streibl

Angestellt, Head of Program Management, Infineon Technologies AG, Munich
Munich, Germany

Werdegang

Berufserfahrung von Martin Streibl

  • Current 6 years and 5 months, since Jan 2020

    Head of Program Management

    Infineon Technologies AG, Munich

  • Current 15 years and 3 months, since Mar 2011

    Product Manager - Automotive Supply ICs

    Infineon Technologies AG

    Infineon Technologies AG, Automotive Division, Product Manager for automotive supply ICs (linear and DCDC voltage regulators), leading international cross functional product teams (R&D, application engineering, marketing, quality engineering)

  • 4 years, Mar 2007 - Feb 2011

    Program Manager - Automotive Power

    Infineon Technologies AG

    Infineon Technologies AG, Automotive Division, Program Manager for automotive power devices, focus on system base chip and automotive transceivers (LIN,CAN,FLEXRAY), leading international development teams

  • 2 years and 5 months, Oct 2004 - Feb 2007

    Staff Engineer - Analog/Mixed-Signal Design

    Qimonda AG

    Qimonda AG, Staff Engineer, concept and design for a highspeed DRAM, chip level design methodology

  • 4 years and 9 months, Jan 2000 - Sep 2004

    Senior Engineer - EOS/ESD Protection

    Infineon Technologies AG

    Infineon Technologies AG, Corporate Development, Senior Engineer for EOS/ESD protection, responsible for overvoltage robust design solutions for BiCMOS and RFCMOS technologies; project lead for innovation projects; nominated for Infineon Inventors Award 2003

  • 3 years and 2 months, Oct 1996 - Nov 1999

    PhD Semiconductor Physics

    LMU Munich / Center for Nanoscience

    Center for Nanoscience, University Munich (LMU), PhD in semiconductor phsyics and optoelectronics

Ausbildung von Martin Streibl

  • 6 years and 1 month, Oct 1990 - Oct 1996

    Study of Physics

    LMU München

    Ludwig-Maximilians-University Munich (LMU), Study of Physics (diploma degree) with special focus on electronics, semiconductor physics, numerics and mathematics. Diploma thesis on optoelectronic properties of III/V semiconductors.

Sprachen

  • German

  • English

    C1 (Fließend)

  • French

    A1-A2 (Grundkenntnisse)

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