Dr. Agata Romanova

Zertifizierungslehrgang

Characterisierung and Modellierung von Halbleiterbauelementen (HBT, CMOS, passive komponenten) der IHP BiCMOS Technologien. Dazu gehört die Untersuchung der Zuverlässigkeit, Tieftemperaturmessungen (LIN), EM Simulation. Design & Layout of Semiconductor Test Structures (Cadence, Texeda); ESD Messungen; EM simulation; Dokumentationen der Charakterisierungs- und Modellierungs-Ergebnisse.

Topic of Master Thesis: Characterization and Modelling of the Degradation of SiGe Heterojunction Bipolar Transistors (HBT). Description: Detailed analysis of degradation behavior with extensive set of stress measurements with both DC/RF characterization. Observed ageing behavior with saturation effect for high stress time. The ageing process has been evaluated as an ageing function and was integrated into SiGe HBT compact model. The improved compact model was evaluated in simulation of TIA circuit.

Development of algorithms for human motion classification using inertial MEMS sensors.

Circuit Design, Advances Micromachining, Non-Si Technology, Digital Image Processing, Sensors and Actors, Hardware Algorithms.

Electronic Devices, Signals and Circuits,Electrical Engineering, Microwave Technology