Gautham Rangasamy

Process development and nanofabrication of Lithium Niobate based photonic integrated circuits

My research was focused on vertical III-V nanowire based TFETs. To that end, I was involved in device fabrication development, characterization at room and cryogenic temperatures, device modeling and simulation. Along with that, I explored TFET based circuits for low power, neuromorphic and quantum computing applications.

• Implementation of process chains in VHDL and verification with simulation test benches (100% code coverage tests) • Deployment to development and target FPGA hardware and support verification at processor and system level • Clients included Airbus and Innosport

• Process development and fabrication of strained-Si based MOSFETs • Device Modelling of strained-Si based MOSFETs in Verilog-A • Design of Si/SiGe based (de-)multiplexers

Consult, prototype and manage implementation of ERP solutions

• Prototyping of Micro-controllers in FPGA with VHDL • Voltage and Thermal reliability analysis of IC chips with Python

Thesis - Fabrication of Si/SiGe transistors for addressing large-scale qubit arrays for quantum computer