Hans-Jürgen Thees

Research and development of next generation Si IGBT and SiC MOSFET technologies

Appointment to the Industry Endorsement Board of the Horizon 2020 EU-Project "IONS4SET" which is researching on low-energy dissipation SET (Single Electron Transistor) quantum devices.

Technology development FEOL 22nm FDSOI; Process integration FEOL 28nm/32nm PolySiON and HKMG technologies; Successfull technology qualification of 28nm performance node; Promotion to Senior Member of Technical Staff; Technology transfer 40nm FEOL for Japanese IDM, embedded DRAM, low power;

Development of organic semiconductor technology and quality assurance policies

Technical management of interdisciplinary engineering group for Qimonda at Infineon Dresden 200mm plant, interface function to international DRAM fabcluster and to Infineon; 46nm buried wordline DRAM technology development

Process integration of deep trench / shallow trench isolation modules, 110/170/200/240nm DRAM and eDRAM technologies

Development / Production of mixed-signal-CMOS-technologies (0.6/0.8µm), EEPROM Research projects with universities and institutes

Research and thesis work on ultrathin nitrided gate oxides / 0.25µm technology

Electrical Engineering, Semiconductor physics and technology, Sensors, Chip design, Material Science and Analysis