Heba Addoushy

Independently responsible for physics simulations of Power MOSFET transistors' manufacturing process and electrical measurements. Created IV curves, CV curves, etc. Performed model calibration based on measurements/fab needs. Interacted deeply with integration and device engineers to assure accurate modeling. Helped anticipate and assess possible process issues, based on inputs from integration or process teams.

Performed behavioral digital design and verification of signal compression and decompression methods for handheld devices, such as JPG and MP3 for application specific integrated circuits (ASIC), using Verilog and MATLAB. The following Cadence tools were used: NCSim for simulation and SimVision for waveform visualization.

Responsibilities included implementing and testing parts of the physical layer of an LTE base station (shared channel and control channels, for example) using Embedded C and TCL. A freescale microprocessor with specific hardware accelerators was used.

Accumulative Grade: 2.3 Thesis: Numerical Simulations of Optical Properties of Silicon Surfaces with Sub-Wavelength-Scale Structures Grade: 2

9 Months graduate program in Information Technology Institute in Egypt. Technical courses taught in the American University in Cairo campus, Center of Nanoelectronics and Devices, Egypt Grade: A (distinction) Graduation Project: Higher Efficiency Thermoelectric Devices Grade: A (distinction)