Jean-Bernard Bouche

Managing a research team (3+1): - Development of glass compositions for various applications in electronic devices, optical systems, semiconductor devices, - Development of organometallic compounds applied by spin coating for use in electronic devices, in collaboration with ITRI / MSL. Managing optical & thermal analyses laboratories: - Purchase and set-up of characterisation devices (Vickers/Knoop microindenter, ED-XRF, UV/Vis/NIR) - Acquisition of glass processing equipment (cutting, grinding, polishing).

In charge of development of glass compositions: - Glass powders for conductive pastes applied in Si solar cells, semiconductor devices, LCD / PDP displays, - Optical glasses with 1- NIR/UV absorbance properties as color compensating filters in camera modules, 2- Selective transmittance as RGB (XYZ) filters in electronic devices, 3- NIR transmittance used in electronic devices. Managing R&D lab: - Purchase and set-up of characterisation devices (DTA/TG, TMA, Thermal stage microscope, Particle size analyser).

Fused Silica divisions: Glass & Metal, Solar. In the Glass & Metal division: - Developed glass tempering roller applications, - Developed an alternative roller fabrication process, - Performed analyses of competition products & processes. In the Solar division: - Developed an alternative coating process to spray coating for solar crucibles, - Conference paper about detrimental effect of alkali-contamination on silica crucibles.

Realisation of a gas-tight and electrically insulating glass-ceramic sealing for Solid Oxide Fuel Cells (SOFCs), in the frame of the European project “REAL-SOFC“ : - Designed glass compositions by use of statistical design of experiments (DoE), - Synthesised and processed glass powders, - Characterised physical and thermo-mechanical properties of glasses and glass-ceramics, - Tested long-term physico-chemical stability of glass-metal seals at high temperature, under a dual atmosphere and an applied voltage.

Rotated MOSFETs Mismatch Characterisation for Assessment of Mechanical Stress in Silicon Wafers, in collaboration with TSMC, Hsinchu: - performed 4-points electrical characterisation (C-V, I-V) - calculated in-layer stresses with Origin and Mathematica Outcome: - demonstrated the assessment of in-layer residual mechanical stress due to the fabrication process - associated publications Ming-Jer Chen, IEDM 2003, IEEE 2007

Characterisation of Si:C Buried Channel n- and p-MOSFETs by the Charge Pumping Technique, in cooperation with CEA-LETI, Grenoble Outcome: - understanding of electrically active carbon interstitial defects in n-MOSFETs - associated publication O. Weber, IEEE, July 2003

Institut für Energie und Klimaforschung, Werkstoffsynthese und Herstellungsverfahren (IEK-1)

Institut für Gesteinshüttenkunde, Glas Werkstoffwissenschaft & Physicalische Chemie

Physics of semiconductor materials and devices

Physics, chemistry and mechanics of materials

Preparatory classes for the competitive exam to enter Engineering Universities

Traditional Chinese Mandarin - listening, speaking, reading, writing skills - Modern China and Taiwan history and culture - 2 semesters 2010-2011