Dr. Mahyar Boostandoost
Fähigkeiten und Kenntnisse
Werdegang
Berufserfahrung von Mahyar Boostandoost
- Current 3 years, since Jul 2023
Head of Quality
Samsung Semiconductor Europe
- 5 years and 4 months, Apr 2018 - Jul 2023
Sr. Development Quality Engineer
NXP Semiconductors Germany
• Manage the quality of the new product and technology development, determine gaps in development and organizational processes and define improvement actions • Deploy quality guidelines for automotive hardware based on the automotive standards and customer requirements • Develop the reliability and qualification strategy for new products • Conduct the 8D methodology and lead the team through it • Manage external suppliers and improve and monitor the change management process • Interact with customers
- 4 years and 5 months, Nov 2013 - Mar 2018
Principal Fault Isolation Engineer
Dialog Semiconductor
• Served as a project leader to acquire and integrate new fault isolation tools into the failure analysis (FA)-Lab to overcome upcoming technology/design challenges of the company • Leading FA efforts to identify the failure root cause in cooperation with design, process and quality teams to provide the corrective actions and satisfy the customer expectations • Integrated the FA-Lab procedures in the product qualification process • Contributed to company’s technical ladder and external conferences
- 5 years, Feb 2008 - Jan 2013
Research Fellow
Berlin University of Technology
• Performed failure analysis services for different OEM automotive suppliers • Cooperated with different R&D institutes and companies to mature my Ph.D. thesis: - transferred microelectronic FA techniques to thin-film PV (Photovoltaic) - published 11 papers in both failure analysis and PV communities • Teaching assistant and supervisor of laboratory courses and seminars • Organized diverse laboratory courses for semiconductor device fabrication / characterization
- 1 year and 9 months, May 2006 - Jan 2008
Student research assistant
Chemnitz University of Technology
Simulation und Berechnung des Tunnelstroms durch die zweischichtigen Gatedielektrika (High K) im MOS Transistor mit Matlab
- 1 year and 1 month, Jan 2006 - Jan 2007
Student Research Assistant
Chemnitz University of Technology
PCB design/implementation and microcontroller (PIC®) programming to develop a monitoring board of position sensors included in the project “Contactless magnetic situation sensor for magnetic bearings”
- 10 months, Apr 2004 - Jan 2005
Control and Instrumentation Engineer
Farineh Sanaat Co.
Participated in the biggest instrumentation and revamping project in Iran jointed with ABB
Ausbildung von Mahyar Boostandoost
- 5 years and 2 months, Feb 2008 - Mar 2013
Electronics/Microelectronics
Berlin University of Technology
Signature of photon emission and laser stimulation for failure analysis of semiconductor devices with respect to thin-film solar cells
- 2 years and 11 months, Mar 2005 - Jan 2008
Electronics/Microelectronics
Chemnitz University of Technology
Modeling of the tunneling current through two layers high-k stacks of MOSFETs
- 4 years and 6 months, Oct 1996 - Mar 2001
Electrical Engineering/Electronics
Shahid Beheshti University
Design/Implementation of a satellite dish orientation controller for optimum signal reception
Sprachen
English
C1 (Fließend)
German
C1 (Fließend)
Russian
A1-A2 (Grundkenntnisse)
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