Indrajeet Bajarang Jadhav

» Development and optimization of Field-Stop IGBT design using TCAD simulation » Coordinate the device fabrication process flow with process engineer » Investigate the static and dynamic characteristics of device for better performance » Optimization of field-stop layer for the electric field stop » Optimization the p-n region and trench region

» Develop the design for SJ Power MOSFETs using TCAD simulation » Investigation of static and dynamic characteristics under charge balance » Characterization of device under avalanche breakdown circumstances during Unclamped Inductive Switching (UIS) to prevent the device from breakdown » Development of termination region to decreases the electric field and increase the BV

» Adaptation of Power MOSFET fabrication technology with focus on heat dissipation » Determine the safe operating area in the range of Spirito Effect until failure point » Quantification of void fraction by evaluation of images from X-ray metrology tool » Extraction of device characteristics such as transient thermal impedance and ZTC » Investigation of packaging influences on the device properties

Quality and Production Department (8D analysis, 5S, 5M, Root cause analysis, customer complaint handling)

» Inspection and testing materials, and products to ensure quality specifications » Coordinate with Quality head to discuss and resolve product quality issues » Monitored production process and identify the defects in products » Handle customer complaints and perform corrective action for customer-related failures using the 8D report

» Non-destructive test characterization of structural steel by electromagnetic measurement techniques using MikoMach (By Fraunhofer IZFP) » Develop the workstation set-up for measurements and performed the NDT test » Participated the Material science and Nondestructive test course » Evaluation and extraction the measurements date in Origin software