Oleg Tokmakov

Modeling of power RF transistors - GaN HFET, LDMOS (ADS, TCAD) Thermal and electro-thermal simulations (Ansys, HFSS)

High-voltage MOS devices modeling. Measurements, TCAD simulation, compact models parameters extraction, equivalent circuits adjustment.

- AlGaN/GaN on SiC HFET, GaAs MESFET, AlGaAs/GaAs pHEMT modeling - Characterization of devices in pulsed test setup, including measurement of IV characteristics, S-parameters and load-pull behavior Measurements for process optimization, surface treatment. - Electromagnetic simulation of components - Design of the test devices, structures and setting up characterization plans - RF PA design for model validation (AWR) - TCAD simulations (sdevice)

- LDMOS and CMOS transistors modeling for several technology nodes - MEMS devices modeling (Ansys) - Software development for model parameters extraction (C/C++) MOS devices characterization, statistical models. Model parameters extraction software development.

Thesis: Transverse Nernst-Ettingshausen effect in high-Tc superconductor ceramics in normal phase https://english.spbstu.ru/