Taimoor Khan

Effect of high-temperature annealing on the properties of AlGaN. AlGaN was grown by MOVPE (by supervised engineer) on a sapphire substrate and subsequently, the layers were annealed in a high-temperature oven at high temperatures. Changes in basic material properties, e.g. composition, threading dislocation density, surface morphology, in-plane relaxation, defect and band edge luminescence, and change in light transmission due to annealing were analyzed by different characterization techniques.

Effect of ramp rate on the epitaxial growth of Monolayer Graphene on SiC. First, wet chemical cleaning on 6H-SiC samples was performed.Then hydrogen etching was done in a hot-wall reactor to produce atomically flat surfaces.After samples were prepared, they were passed through the graphitization process in an Ar atmosphere in the same reactor to produce monolayer graphene at different ramp rates.Afterward, AFM was used to observe the morphology and XPS was used to confirm the number of layers of graphene

Semiconductor physics - Nano structures, Materials in micro an nano technologies, Innovative Material Engineering, Microscopy and Analysis on the Nanoscale, Surface Interface Engineering, Advanced Surfaces, Thin Films and Interfaces, etc.

Nano-characterization Techniques, Surface Engineering, Advanced Materials, Deformation and Fracture, Nanotechnology in Energy, Nanostructures and Devices, Material Evaluation Techniques, Heat Treatment and Processing, Manufacturing Processes, Phase Equilibria and Microstructures, etc.