Gvidas Sidlauskas
Freiberuflich, freelancer ASIC engineer, gs-asic
Nijmegen, Niederlande
Werdegang
Berufserfahrung von Gvidas Sidlauskas
Bis heute 2 Jahre und 8 Monate, seit Feb. 2022
freelancer ASIC engineer
gs-asic
4 Jahre und 11 Monate, März 2017 - Jan. 2022
RF design engineer
Qualcomm
5 Jahre und 11 Monate, Mai 2011 - März 2017
RF Design engineer
Radio Semiconductor Corporation
1 Jahr und 1 Monat, Apr. 2010 - Apr. 2011
ASIC Design engineer, research asistance
ASIC Lab, Kirchhoff Institute for Physics, Heidelberg University.
Mix signal BACK-END ASIC support engineer for mix-signal test chips. Supported and couched PHD students regarding project flow. Supported of PHD students in tape-out MIX-SIGNAL IC (RTL2GDS, STI, DRC, LVS, ANTHENA). Supported on improvement of design flow for MIX SIGNAL IC design of 0.180 um technology.
1 Jahr und 11 Monate, Apr. 2008 - Feb. 2010
ASIC Development Engineer
FBE-ASIC
Worked on different projects for few company's on top level mix signal simulations and layout tasks. Simulation of PLL with Cadence MMSIM and Spectre. Pure analogue and mix signal (SpectreVerilog) simulation with Cadence Ocean scripts.
3 Jahre und 6 Monate, Okt. 2004 - März 2008
IC layout engineer
KMSD Ltd.
Worked in a local IC design team as an a full custom analogue layout engineer. Projects: High speed cells wiring, macro cells wiring, top level layout wiring. Worked in a local IC design team as an a full custom analogue layout engineer. Projects: Low speed analogue blocks layouts routing. New technology development.
Ausbildung von Gvidas Sidlauskas
2 Jahre und 11 Monate, Sep. 2004 - Juli 2007
Electronics Engineering, Applied electronic
Kaunas University of Technology
Diploma theme: 8 bit Digital Analogue Converter Task: 8 bit digital analogue converter, based on 0.18 um technology . During master thesis current mirror matrix and control logic were created.
3 Jahre und 10 Monate, Sep. 1999 - Juni 2003
Electrical Engineering, Electronic equipment
Kaunas University of Technology
12V/220V DC/AC Converter. Realization was done with PWM modulator, n-channel power mos-fets and three windings transformer.
Sprachen
Englisch
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